Celebrating a Century of Perseverance: NTU Centennial Series Events Unveiled
The VLSI TSA symposium chairman, Peide Ye (left) from Purdue University, presents the Best Student Paper Award to Chun-Yi Cheng (center), with Prof. Chee Wee Liu (right) in attendance.
A slide of the PPT presentation of the award-winning paper.
The research team led by Prof. Chee Wee Liu (劉致為) from the Graduate Institute of Electronics Engineering won the Best Student Paper Award at the 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA). The first author of the paper was NTU doctoral student Chun-Yi Cheng (鄭群議) from the nanoelectronics group of the Institute, who became the first NTU student to receive this award. The award ceremony was held on April 18, 2023 at Ambassador Hotel Hsinchu, showcasing NTU’s outstanding achievements in the field of semiconductors to the world.
The award-winning paper was titled “6 Stacked Ge0.95Si0.05nGAAFETs without Parasitic Channels by Wet Etching,” which built on the research achievements of Professor Liu’s team in 2021. The main contribution of this paper is the integration of high-density (6 layers) stacked nanowire transistors with GeSi high-mobility channels, which increased the driving current to a world record level for Ge/GeSi 3D n-type transistors at the time of submission. Additionally, the paper optimized the etching process to successfully remove parasitic channels of the transistors, reducing the leakage current and improving the on/off current ratio to 1.5x105 while reducing the subthreshold swing to 80 mV/dec.